Abstract

This chapter supplies an introduction to the use of grazing incidence x-ray scattering as a surface sensitive tool for the study of near-surface nanostructures as well as a presentation of more recent developments using focused x-rays. An instrumental part is presenting the technical challenges that have to be met in surface diffraction and when using focusing techniques. Particular information is supplied on the potential of diffraction applicable in situ during the growth of semiconductor nanostructures. The interpretation of intensity distributions recorded in grazing incidence diffraction (GID) and grazing incidence small angle x-ray scattering (GISAXS) is explained quantitatively and in detail. The reader is then guided through examples all based on the investigation of the growth of Ge islands on Si(001), were all steps of the growth are presented, from a change in the surface reconstruction up to multifaceted islands. In the last section, x-ray diffraction with focused coherent beams is presented as a new tool to retrieve spatially resolved information from individual nanostructures.

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