Abstract
This chapter introduces dilute nitride semi conductors as these potential semiconductor device applications stem from the decrease in the fundamental band gap and the associated increase in the effective mass of the electrons. The studies of quaternaries, such as epitaxial GaNAsSb are more common than those of ternary dilute nitrides. The compositional analysis of these alloys is complex, especially given that nitrogen content is challenging to measure quantitatively, moreover, it is difficult to incorporate sufficient nitrogen in additional lattice sites. Therefore, the dilute nitride epi-layer thicknesses employed in dilute nitride devices are limited by critical thickness considerations. The published achievements and future potential for progress in the growth of dilute nitride alloy use the Chemical Beam Epitaxy (CBE) technique and indeed it reproduces responsive control of the semi-conductor fluxes that are essential in the growth of dilute nitride devices. It is clear that significant progress has been made, in spite of the much smaller number of research groups involved in the development of CBE compared with those involved in MBE/MOVPE.
Published Version
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