Chapter 14 - Dislocation-free III–V-N Alloy Layers on Si Substrates and Their Device Applications

Abstract

This chapter explains that the generation of structural defects— such as dislocations, stacking faults and anti-phase domains can be suppressed by overcoming the three problems in the growth of III-V compound semiconductors on Si substrates. Dislocation-free GaPN, GaPAsN and InGaPN layers as well as silicon (Si) layers were obtained on a Si substrate. Alloy compositions were adjusted to lattice-match to Si. These III-V-N alloys with small N compositions lattice-matched to Si then, showed specific features of efficient light emission and absorption, co-efficient near a band gap although the III-V compound semiconductors without nitrogen. However, it displayed poor electro-luminescence and a small absorption co-efficient near a band gap due to an indirect band gap. Thus, highly efficient opto-electronic devices have been expected such as LEDs, lasers and solar cells. A more attractive device OEIC, in which opto-electronic devices and LSIs were formed in III-V-N alloy and Si layers, respectively.