Abstract
Magnetoresistive (or magnetic) random-access memories (MRAMs) belong to the nonvolatile memory devices, using magnetism to store information for long time periods. MRAMs are faster than mechanical hard disk drives and unlike solid-state drives (SSDs), can store data even without regular energy supply. A few other ideas, such as ferroelectric and phase-change materials, are also expected to show similar properties but are scarcely investigated.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Chemical Solution Synthesis for Materials Design and Thin Film Device Applications
Paper Title
Journal
Date
