Chapter 2 - Silicon carbide as a highly permissive surface for neural stem cells

Abstract

Silicon has been considered one of the key materials in the microelectronics industry for more than 60 years, due to its particular structural properties such as high breakdown electric field strength, high saturated electron drift velocity, and high thermal conductivity. Nowadays, the generation of new classes of semiconductors, including cubic silicon carbide (3C–SiC), represents a challenge in the context of implantable medical devices as these materials have shown a high degree of bio and hemocompatibility opening new scenarios for permanent devices being able to drive cell replacement therapies. However, the use of such materials in specific tissue requires careful investigation due to its different compatibility with different tissue types. In this chapter, we report experiments on the biocompatibility of silicon and 3C–SiC using an in vitro model of human neuronal stem cells derived from dental pulp (DP-NSCs) and mouse olfactory ensheathing cells (OECs), a particular glial cell type showing stem cell characteristics. Specifically, we investigated the effects of 3C–SiC on neural cell morphology, viability, and mitochondrial membrane potential. Data showed that both DP-NSCs and OECs, cultured on 3C–SiC, did not undergo consistent oxidative stress events and did not exhibit morphological modifications or adverse reactions in mitochondrial membrane potential. Our findings highlight the possibility to use neural stem cells plated on a 3C–SiC substrate as a clinical tool for lesioned neural areas, paving the way for future perspectives in novel cell therapies for patients suffering from neurodegeneration.