Abstract
This chapter addresses the issues of the electron beam radiation damage that are commonly encountered during physical failure analysis (PFA) in the modern semiconductor industry by scanning electron microscopy, focus ion beam, and transmission electron microscopy. We discussed the effects of electron beam radiation on the phase, microstructure, and compositions of some typical electron beam–sensitive materials used in semiconductor devices, such as low-k and ultralow-k dielectrics, silicon nitrides, and CoFeB ferromagnetic materials. Based on the detailed case study and analysis, we elaborated on the underlying mechanisms associated with the electron radiation of different materials. Meanwhile, comprehensive technical solutions were proposed to minimize the electron beam radiation damages during the PFA of these special types of materials.
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