Abstract
This chapter reviews the molecular beam epitaxy (MBE) growth of wide band gap II–VI semiconductor quantum structures and their applications in intersubband (ISB) photonic devices. It consists of three parts, with the first part dedicated to the growth and characterization of quantum-well infrared photodetectors (QWIPs). The QWIPs were made from ZnCdSe/ZnCdMgSe multiple quantum wells (MQWs) grown lattice matched on InP substrates and work in the two important mid-infrared (mid-IR) spectral regions—the long wave IR (LWIR) and medium wave IR (MWIR) regions. The second part describes the realization of short wavelength ISB absorption in the material system through band structure engineering. By using coupled quantum wells and optimizing the MgSe barrier layer thickness, ISB absorption in the optical communication wavelength of 1.55 μm has been achieved. The third part summarizes our effort on the growth and characterization of ZnO/ZnMgO QWs. Mid-IR ISB absorption was observed for the first time in ZnO-based quantum structures, making them promising for ISB devices as well.
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