Chapter 14 - Ferromagnetism in GaN and Related Materials

Abstract

The aim of this chapter is to discuss ferromagnetism in gallium nitride (GaN) and related materials. This chapter elucidates recent results on achieving ferromagnetism in transition metal-doped GaN, AlN, and related materials. While current generations of semiconductor electronic and photonic devices utilize the charge on electrons and holes to perform their specific functionality such as signal processing or light emission, the field of semiconductor spintronics seeks to exploit the spin of charge carriers in new generations of transistors, lasers, and integrated magnetic sensors. There is strong potential for new classes of ultralow power, high-speed memory, logic, and photonic devices. The utility of such devices depends on the availability of materials with practical magnetic ordering temperatures and most theories predict that the Curie temperature will be a strong function of bandgap. This chapter discusses the current state-of-the-art in producing ferromagnetism in GaN and related materials, exhibiting room temperature ferromagnetism, the origins of the magnetism, and its potential applications.