Abstract
The principles of super-higher-order scanning nonlinear dielectric microscopy (SHO-SNDM), which represents a modification of SNDM, are described. The utility of this technique is demonstrated by assessing the depletion layer and carrier distribution along a cross section of a double-implanted MOSFET (DIMOSFET) based on SiC. The resulting data is shown to allow a detailed visualization of the dopant distribution and to clearly differentiate p-type, n-type, and depletion layers. The images obtained using SHO-SNDM are in good agreement with the expected structure of a DIMOSFET. The depletion layer in this device was also examined so as to determine the types of carriers in amorphous and monocrystalline Si-based solar cells. In addition, the carrier profile along a cross section of a gate-biased SiC DIMOSFET was visualized based on an extension of the SHO-SNDM technique. This method is shown to allow a reasonably accurate determination of changes in the carrier distribution with variations in the gate-source voltage.
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