Abstract
This chapter reviews the electronic, thermal, and optical properties of Silicon (Si) at low temperatures. The chapter discusses the electronic properties of Si, such as carrier mobility, carrier density, and electrical conductivity. Phenomenological models for the carrier mobility as a function of temperature, doping level, and bias conditions are combined through Mathiessen's rule to evaluate the effective carrier mobility for electrons and holes in Si. The analysis of these experimental data allows an estimation of the impact of the velocity overshoot and ballistic transport on the electrical performance of deep-submicrometers metal oxide semiconductor (MOS) transistors. MOS transistors have been tested and developed for cryogenic applications. The chapter also reviews some fundamental optical properties of Si at cryogenic temperature, such as the absorption, quantum efficiency, detectivity, time response, and noise. The application of Si-based optical detectors for cryogenic operation are based on the fundamental optical properties of Si.
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