Abstract
Growth behavior, growth mechanism and crystallographic quality of Si single and multi-crystals for solar cells are basically explained mainly about degree of supercooling, growing interface, wavy perturbation, grain boundary grooves, dopant distribution, crystallographic structure, impurities and defects such as grains, grain boundaries and dislocations. Especially for crystal defects, grains and grain boundaries are explained for every type of them like small and large angle grain boundaries, CSL grain boundaries, random grain boundaries, coherent grain boundaries, twin boundaries and twin formation. Effects of misorientation of grain boundaries on dislocation generation, behavior and generation of dislocations, effects of shear stress on formation of dislocations, and many kinds of impurities are also explained in detail. For impurities, O, C and N atomic impurities, O or SiO2 precipitates and metallic impurities and precipitates, especially for Fe impurities and precipitates, are explained.
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