Abstract
This paper reviews the channel mobility problem in 4H-SiC MOSFETs. The importance of fundamental investigations on dielectric-SiC interfaces for next generation SiC power devices are highlighted and state-of-the-art interface passivation processes are discussed. Transport limiting mechanisms in current 4H-SiC MOSFETs are discussed and some key areas that need to be investigated for further improvement of this technology are identified. A necessary shift of focus from interface trap density reduction to other transport limiting mechanisms is motivated by discussing recent results.
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