Characterization of interface traps in the subthreshold region of implanted 4H and 6H-SiC MOSFETs

Abstract

In this paper the interface trap densities ( D it) of 4H and 6H-SiC MOSFETs in the subthreshold region have been studied. Interface trap densities in this region were extracted as a function of trap energy ( E T) from the transfer characteristics. We show these interface trap densities increase exponentially approaching the onset of strong inversion for both polytypes, and D it( E T) is higher in 4H than in 6H through the subthreshold region. These results are consistent with previous reports [1–6].