Abstract
The device characteristics of Si-nanowire FET (Si-NWFET) are investigated with non-equilibrium Green's function (NEGF) method. In this study, we characterize the effect of channel modulation by engineering dopant profiles, oxide thickness, and corner rounding of nanowire cross section, and suggest how to enhance the performance of Si-NWFET. Our simulation shows that the engineering of dopant profiles in nanowire channel should differ from that in conventional planar MOSFET. It is also found that oxide thickness variation does not affect the performance of Si-NWFET, provided that it has high source/drain (S/D) resistance. Finally the effect of corner rounding in silicon nanowire channel is discussed
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