Comparative Study on Si and Ge p-Type Nanowire FETs Based on Full-Band Non-Equilibrium Green's Function Simulation

Abstract

Atomistic hole transport simulation based on a nonequilibrium Green's function method and tight-binding ap- proximation has been performed for Si and Ge p-type nanowire FETs with the diameter ranging from 1.6nm to 3nm. Simu- lation results show that the drain current density increases with increasing the nanowire diameter and the difference in drain current between Ge and Si nanowire FETs becomes smaller with reducing the nanowire diameter. Keywords—Silicon; Germanium; Nanowire; NEGF method; Tight-binding; Simulation