Abstract
AbstractIn this paper, we report simulation results for capacitance–voltage characteristics and temperature distribution in the cross‐section of p‐type gate‐all‐around nanosheet channel using an in‐house developed numerical simulator. The effects of material, channel width, and crystallographic orientation on electrical and thermal properties of p‐type nanosheet transistor are comprehensively investigated. The effect of channel engineering is analyzed, by evaluating density‐of‐states, hole density, current densities as well as distributions of temperature in the channel cross‐section. Finally, the thermal reliability of the device is addressed in terms of thermal resistance. The density‐of‐states and the hole density distribution at the oxide/channel interface can well explain the effective intrinsic capacitance obtained from the simulation. The better uniformity of the hole density distribution across the cross‐section of (110)/[001] channel, shows good promise for less performance fluctuation in terms of the thermal reliability issue.
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