Abstract
AbstractThis paper proposed analytical modeling of a Schottky tunnel field‐effect transistor (STFET)—based biosensor with adjusted gate oxide. This model is developed by resolving the Poisson's equation and calculating the parabolic potential lateral to the channel depth. The special property of the bio‐transistor, which serves as a biosensor, is then included in the analytical modeling of drain current. After the biomolecule interacts with the bio‐transistor, a change in the drain current was employed as a metric to determine the sensitivity. The advanced analytical modeling explored several device restrictions. A device simulation is used to maintain and validate the established and planned characteristic trend. Consequently, the suggested model can be the right solution for the best design and fabrication of a biosensor.
Published Version
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