Channel doping effects in negative capacitance field-effect transistors

Abstract

The channel doping effects in negative capacitance field-effect transistors (NCFETs) of the metal-ferroelectric-insulator-semiconductor (MFIS) structure are analysed in this work, and an analytical model is developed. The NCFET threshold voltage with channel doping is defined, and a nonmonotonic dependence on the doping concentrations is predicted. A unified charge formulation is developed for the current–voltage characteristics of double gate MFIS structures. Statistical modelling for NCFETs is further developed. Standard deviations of four parameters are extracted, reproducing the distributions of NCFET current–voltage characteristics. Experimental calibrated TCAD simulations validate the analytical model for wide ranges of device parameters, allowing its application to devices and circuits.