Change in Characteristics of SiC MOSFETs by Gamma-Ray Irradiation at High Temperature

Abstract

Radiation response of 4H-SiC vertical power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated at 150°C up to 10.4 MGy. Until irradiation at 1.2 MGy, the drain current – gate voltage curves of the SiC MOSFETs shifted to the negative voltage side, and the leakage of drain current at gate voltages below threshold voltage increased with increasing absorbed dose. However, no significant change in the electrical characteristics of SiC MOSFETs was observed at doses above 1.2 MGy. For blocking characteristics, there were no degradations of the SiC MOSFETs irradiated at 150°C even after irradiated at 10.4 MGy.