Abstract
For the first time, cerium-doped strontium sulfide (SrS:Ce) thin film electroluminescent (TFEL) devices have been fabricated by multi source deposition using Ga2S3 compound. Ga2S3 is able to provide elemental sulfur without leaving Ga in the phosphor films. This new precursor is excellent for controlling the sulfur supply, due to its low vapor pressure. Highly crystalline SrS thin films have been deposited with preferentially (200)-oriented. Full width at half maximum of the X-ray diffraction peak is 0.22°. The composition of the thin film is close to the stoichiometry, and the element Ga was not detected in the film. The TFEL device shows a luminance level of 160 cd/m2 at 40 V above the threshold voltage, and the CIE color coordinates are x=0.30 and y=0.51.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
