Abstract
A high-temperature physically-based C∞-continuous model of low doped accumulation mode SOI pMOSFETs for all regimes of normal operation is presented. The model is based on explicit expressions of the drain current which have an infinite order of continuity. Short-channel effects have been included. The calculated characteristics show good agreement with the measurements for temperatures up to 300°C with smooth transitions between regions of operation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.