Abstract
The behavior of single (SG) and double gate (DG) Accumulation Mode (AM) SOI MOSFETs is thoroughly investigated. These devices present some advantages over Inversion Mode (IM) devices concerning transconductance, easiness of fabrication and parasitic effects. We have observed, from experimental results and 2-D simulations that the short channel effects such as DIBL are substantially reduced in the volume accumulation regime, being even lower in thin-film DG AM SOI MOSFETs than in IM DG SOI devices. The potential of thin-film AM SOI MOS transistors down to sub-0.1 mu m technologies has been demonstrated.
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