Abstract
The cavity enhancement effect of the transparent semiconductor SnO 2 on the magneto-optical Kerr response of the glass/Al/SnO 2/PtMnSb/SnO 2 multilayer structure has been investigated using a matrix method. It has been demonstrated that device optimization leads to large Kerr rotation and figure of merit (FOM) with a vanishing ellipticity in the visible portion of the electromagnetic spectrum, especially at short wavelengths. This optimization is of interest in view of optical data storage technology. Using numerical simulations, we have also shown that in the optimum condition, the device readout parameters behave smoothly against the design variables.
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