Abstract
In a solid solution Ga2(S1-xTex)3 prepared by an improved method, a uniform and intense cathodoluminescence is observed over the entire polycrystalline sample. The optimum composition for an intense luminescence is found to be x∼0.25. The composition dependence of an optical energy gap and the luminescence spectrum of the sample are obtained. Thin films are grown on Si substrate and their light-emitting characteristics are also measured. Composition dependence of emission intensity may be attributed to the fact that the sample is a mixture of a crystal with a tetragonal structure and an α-Ga2S3 crystal in the composition range 0<x<0.20.
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