Abstract
Beta gallium oxide (β-Ga2O3) ceramics was coupled and reacted with zinc oxide (ZnO) ceramics at 1200oC for 24 h. Energy dispersive X-ray spectroscopy (EDS) analysis revealed the existence of diffusion layer near the interface between β-Ga2O3 and ZnO. Furthermore, the layer showed monochromatic and intense cathodoluminescence (CL) at 3.5 eV. On the other hand, very weak emissions were observed from the out of the layer. The compound in the layer is considered to be an attractive material for ultraviolet optoelectronics.
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