Abstract
Phosphorus and arsenic impurities have been introduced into single crystal thin films of gallium nitride by ion implantation. New luminescence bands are observed at 2.85 eV for the phosphorus implant and at 2.58 eV for the arsenic implant. There is some evidence for charge carrier compensation. A band at 2.2 eV is associated with implantation damage and high temperature annealing.
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