Abstract
Catalyst-free graphene films has been synthesized by microwave (MW) surface wave plasma (SWP) chemical vapor deposition (CVD) using hydrogenated carbon source on silicon substrates at low temperature (500℃). The synthesized process is simple, low-cost and possible for application on transparent electrodes, gas sensors and thin film resistors. Analytical methods such as Raman spectroscopy, transmission electron microscopy (TEM) and four points prove resistivity measurement and UV-VIS-NIR spectroscopy were employed to characterize properties of the graphene films. The formation of multilayer of graphene on silicon substrate was confirmed by Raman spectroscopy and TEM. It is possible to grow graphene directly on silicon substrate (without using catalyst) due to high radical density of MW SWP CVD. In addition, we also observed that the hydrogen had significant role for quality of graphene.
Highlights
Graphene is a single layer of sp2 hybridized carbon atoms arranged in a honeycomb lattice with hexagonal rings
Thermal chemical vapor deposition (CVD) has been a main method to synthesize of graphene, it requires high temperature, catalyst films, post-transfer and additional catalyst removal process are needed
We report the catalyst-free graphene synthesized on silicon substrate by microwave (MW) surface wave plasma (SWP) CVD using hydrocarbon as a plasma source gas at low temperature (500 ̊C)
Summary
Graphene is a single layer of sp hybridized carbon atoms arranged in a honeycomb lattice with hexagonal rings. Since the discovery of mono and few layers of graphene film (2004), it has become the attractive research subject in nanomaterial science due to its many unique physical, Chemical, mechanical properties and a possible use of low-cost flexible transparent electrodes, Photovoltaics or microelectronics devices [1]-[12]. (2016) Catalyst-Free Growth of Graphene by Microwave Surface Wave Plasma Chemical Vapor Deposition at Low Temperature. Thermal CVD has been a main method to synthesize of graphene, it requires high temperature (above ∼1000 ̊C), catalyst films, post-transfer and additional catalyst removal process are needed. We report the catalyst-free graphene synthesized on silicon substrate by microwave (MW) surface wave plasma (SWP) CVD using hydrocarbon as a plasma source gas at low temperature (500 ̊C). We compared the quality of graphene film grown on silicon substrate with different hydrogen (H2) flow rate during deposition
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