Abstract
Graphene thin films synthesized directly at low temperature (550˚C) on silicon substrate by microwave (MW) surface wave plasma (SWP) chemical vapor deposition (CVD) using the cover on substrates for avoiding plasma emission ultraviolet ray’s effect during film deposition. Analytical methods such as Raman spectroscopy, Transmission electron microscopy (TEM) and Scanning electron microscopy (SEM), four-point probe method, and JASCO V-570 UV/VIS/NIR spectrophotometer were employed to characterize the properties of the graphene films. Here, we report that it is possible to grow graphene directly on the silicon substrate (without using catalyst) due to the high radical density of MW SWP CVD. Furthermore, we fabricated graphene/silicon Schottky junction solar cells with an efficiency of up to 6.39%. Compared to conventional silicon solar cells, the fabrication process is greatly simplified; just graphene is synthesized directly on n-type crystalline Si substrate at low temperate.
Highlights
Graphene is a single layer of carbon that has a hexagonal lattice with a carbon-carbon distance of 0.142 nm
Graphene thin films synthesized directly at low temperature (550 ̊C) on silicon substrate by microwave (MW) surface wave plasma (SWP) chemical vapor deposition (CVD) using the cover on substrates for avoiding plasma emission ultraviolet ray’s effect during film deposition. Analytical methods such as Raman spectroscopy, Transmission electron microscopy (TEM) and Scanning electron microscopy (SEM), four-point probe method, and JASCO V-570 UV/VIS/NIR spectrophotometer were employed to characterize the properties of the graphene films
We believed that the MW-SWP CVD has produced ultraviolet rays during plasma emission
Summary
Graphene is a single layer of carbon that has a hexagonal (honeycomb) lattice with a carbon-carbon distance of 0.142 nm. It is the first two-dimensional crystalline material and represents whole 2D material. Thermal CVD has been a main popular method to synthesize graphene everywhere, it requires high temperature (above ~1000 ̊C), catalyst films, post-transfer, and additional catalyst removal process are needed. For leaving this complicated graphene synthesis process, direct growth of graphene without using any other catalyst is very attractive.
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