Abstract
We have successfully developed novel extraction enhanced lateral insulated gate bipolar transistors (E <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> LIGBTs), which exhibit super-high speed switching of 34 ns turn-off time and a low on-state voltage of 3.7 V at 84 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> simultaneously with a high breakdown voltage of 738V. For the first time, E <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> LIGBTs have exceeded the counterpart lateral DMOS both in switching speed and in on-resistance. The superior performance is achieved by the novel anode structure consisting of a narrow p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -injector and a wide Schottky contact on a lightly doped p-layer over an n-buffer. The on-state voltage can be further reduced to 3.0V at 84 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> by introducing Carrier Storage (CS) layer. The developed E <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> LIGBTs achieved the best trade-off between on-resistance and switching speed among all the lateral MOS power devices, so far reported.
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