Abstract
Time-resolved photoluminescence decay caused by carrier trapping to the deep Fe level has been studied in epitaxial GaInP. Carrier trapping time is found to be strongly dependent on the Fe concentration up to 1×1018 cm−3. The electron capture cross section for the neutral iron level Fe3+, evaluated from the luminescence transients, is in the range from 6×10−16 to 1×10−15 cm2 for the temperature interval 70–250 K.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.