Abstract
The carrier transport mechanism of a low resistance Ti/Al/Au Ohmic contact to AlInN/GaN heterostructures was investigated. The Ohmic contact produced upon thermal annealing was due to the generation of TiN contact inclusions with a density of 2.8 × 108 cm−2, i.e., spike mechanism. The sheet resistance of channel layer was found to follow power law, yielding the power index of −1.57. Temperature dependent contact resistance could be understood based on the parallel network model consisting of distributed resistance components of TiN contact inclusion (predominant) and the rest sound region (negligible), giving the barrier height of 0.65 eV and the carrier density of 2.3 × 1019 cm−3 at the TiN/GaN interfaces.
Published Version
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