Abstract
Carrier relaxation dynamics in self-assembled InAs/Ga0.2In0.8As0.4P0.6/InP(001) quantum dashes (QDashes) has been studied by degenerated time-resolved pump-probe and non-resonant photoluminescence spectroscopy at low temperature. These experiments yielded information about the exciton ground-state recombination lifetime reaching ∼1.75 ns. Additionally, the excited-to-ground state relaxation time has been measured to increase significantly from ∼40 ps up to ∼250 ps with the QDash size. Slow down of the intra-band relaxation time is interpreted in terms of the internal dash-to-dash energy-band-structure variation. The carrier dynamics in this case is most likely governed by the acoustic-phonon-mediated scattering processes.
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