Abstract
Carrier lifetime limited by radiative and most probable non-radiative recombination processes was calculated for InAs(Ga,Sb,P) heterostructures under injection. At low temperatures (T<130 K), the carrier lifetime was mostly determined by radiative recombination. With temperature increasing, influence of Auger processes became crucial. Among these processes, the dominating role of CHHS process, in which the energy of a recombining electron-hole pair is transferred to a heavy hole transitioning to the spin-orbit-splitted band, was established at low temperatures.
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