Abstract
Radiative and non-radiative recombination processes in Sb-based laser structures are calculated and discussed with a focus on the differences between type I and type II laser structures. Auger recombination, optical gain, and intervalence band absorption are computed as a function of temperature for ideal laser threshold conditions. These quantities as well as laser threshold currents are discussed for each type of structure. The calculations show that the type I structure is dominated by radiative recombination at low temperatures and by electron Auger processes at high temperatures, and it has the lowest threshold current of the two laser structures studied. The type II structure has similar behavior except it is dominated by hole Auger processes at high temperatures. Finally, these recombination rates are correlated with qualitative features in the bandstructures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
