Abstract
Threshold characteristics of quantum-well (QW) lasers have been investigated theoretically. The rates of radiative and Auger nonradiative carrier recombination processes in QW have been calculated. Auger rate dependence on the parameters of QW and the temperature has been investigated. It is shown that Auger rate is a nonmonotonic function of QW thickness a; it has a maximum at small a. Auger rate increases with the barrier height and decrease rapidly with band gap; Auger rate is a power function of temperature. It was shown that the carrier concentration on the generation threshold is a linear function of temperature. Threshold current density is shown to be a power rather than exponential function of temperature.
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