Abstract
We have investigated the kinetics of photoexcited carriers in ZnSe by optically detected cyclotron resonance (ODCR). The results obtained are divided into two groups. The first is a group of phenomena originating in electron--polar-optical-phonon interaction: (1) resonant exciton formation following one LO-phonon emission; (2) resonance magnetic field of polaron cyclotron resonance is 4% higher in ODCR than in ordinary cyclotron resonance; (3) the formation rate of deep-acceptor-bound excitons is modulated by electron kinetic energy. The second is a group of phenomena related to two-dimensional (2D) electron systems constructed at a twin-boundary region: (1) magnetic field and its direction dependences of photoluminescence, ODCR, and thermally detected cyclotron resonance (TDCR), and (2) photoexcitation dependence of TDCR are observed, where one finds that the formation rate of bound states contributing to photoluminescence is dependent on the kinetic situation of the 2D electron system, and that ${\mathit{I}}_{3}$ and S lines in the photoluminescence spectrum are related to shallow impurities.
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