Abstract
AbstractThe evolution of THz emission, current and probe voltage in SiGe‐QW laser structures at the leading front of voltage pulse was studied. The excitation of stimulated THz emission is shown to be the result of electron injection through contacts and/or n‐Si substrate. The mechanism of intra‐center population inversion caused by carrier injection is suggested. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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