Abstract
Enhancements of two-photon and three-photon absorption coefficients with increasing carrier density at photon energy near one-half band gap in a GaAs/AlGaAs quantum well laser structure were observed. The results were obtained by calibrating 1560 nm, 130 fs laser transmission data through the laser diode with lasing wavelength around 840 nm. Such enhancements are mainly attributed to the existence of hole states in the valence subbands during carrier injection. With the hole states, two-photon absorption finds more transition paths for a higher transition rate. Such hole states are less effective to the two-photon transition in the TM polarization.
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