Abstract
We examined the electromagnetic responses of near-infrared metamaterials consisting of split-ring resonators fabricated on GaInAs semiconductor layers with different doping levels on an InP substrate. The inductance-capacitance (LC) resonances of the split-ring resonators could be controlled entirely from 52 to 63 THz by changing the carrier concentrations from 2.6×1018 to 2.7×1019 cm−3. Our results show the feasibility of semiconductor-based tunable metamaterials.
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