Active Control Transmission of Terahertz Metamaterials Based on Ion Implantation and Light Pumping

Abstract

A method (ion-implantation) that can control surface carrier density of silicon wafer in silicon fabrication industry is combined with metamaterial to demonstrate a new way to control response of metamaterial transmission operating at terahertz frequency. Ion-implantation which is the most exact and easy way to control carriers of silicon wafer is used to fabricate a stable response of transmission metamaterial. Therefore, a split-ring resonators (SRRs) metamaterial is designed and fabricated to investigate the relationship between carrier density, power of pumping light, and transmission. Meanwhile, the numerical simulation was carried out to verify the experimental results. The relationship between the simulation results and experiments results was confirmed. This method could be a potential way to make stable response of metamaterial, which could be switcher, filter, and terahertz detectors.