Carrier-carrier interaction effects on transient valley repopulation and velocity in silicon

Abstract

The effects of carrier-carrier interactions on the transient valley repopulation and velocity in bulk silicon has been investigated using an ensemble Monte Carlo method. The expressions for electron-electron scattering rates take into account the ellipsoidal nature of the energy surfaces in silicon. The relative effects of both electron-plasmon and short range e-e interactions strongly depend on the orientation and magnitude of the electric fields. The e-e interactions reduce the transfer rates of electrons from the hot valleys to the cold valleys, increase the energy of the electrons in the cold valleys, and reduce the transient velocity overshoot in the hot valleys. These effects are more significant at higher electron concentration.