Abstract
The ensemble Monte Carlo (EMC) method has been used to study the vertical electron transport in GaAs/AlxGa1—xAs superlattices. The EMC method was applied in a slightly n-doped GaAs/AlxGa1—xAs superlattice (<1013/cm3) to obtain the transient drift velocity for Γ electrons. The following scattering mechanisms are included in the calculations: inelastic acoustic phonon, polar optical phonon, ionized impurity and interface roughness. The first three mechanisms are calculated using a three-dimensional approach, while the interface roughness is calculated using a two-dimensional approach. Intersubband scattering has not been taken into account because only one miniband in the superlattice was assumed. The goal is the study of the influence of interface roughness scattering on the Bloch oscillations and on the static response by the Monte Carlo approach.
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