Abstract
In this paper, threshold voltage V TH instabilities under positive gate voltage stress (V GStress ) are thoroughly investigated on GaN-on-Si Enhancement-mode MOS-channel HEMTs. An analysis of pBTI transients performed at several V GStress and temperatures (T) reveals two trap populations close to the Al 2 O 3 /GaN interface namely (1) C N acceptors in the GaN substrate, and (2) defects in the Al 2 O 3 gate oxide. Both trap populations lead to V TH instabilities via different underlying mechanisms as evidenced by TCAD simulations. At V GStress TH drifts are ascribed to C N traps ionization localized at 0.8-0.9eV above the valence band (E v ). At higher VGstress, electron trapping also occurs in Al 2 O 3 defects leading to stronger V TH degradation. DC & AC pBTI transients have been modeled using Capture Emission Time (CET) map approach, which allowed the identification of both trap populations. Temperature-dependent CET maps extraction reveals a strong activation of C N traps with temperature, and confirms Arrhenius analysis consistency. This study provides a deep understanding of BTI reliability in GaN-HEMT technologies.
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