Abstract
Changes in the infrared absorption bands of different carbon-oxygen complexes which exist in as-grown Czochralski crystals occur concurrently with the precipitation of the interstitial oxygen during high-temperature heat treatment. The rate of change in the interstitial oxygen concentration and in the infrared absorption due to the carbon-oxygen complexes can be affected both in the same way through changes in heat treatment parameters such as the temperature and ambient gas. These results support the view that the different carbon-oxygen complexes act as heterogeneous nuclei for oxygen precipitation in Czochralski silicon.
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