Germanium effect on oxygen precipitation in Czochralski silicon

Abstract

The oxygen precipitation in germanium-doped Czochralski (GCZ) silicon has been investigated. After a prolonged annealing at 800 and 1000°C, it was found that the Ge-doping enhanced the formation of oxygen precipitates with a higher density and modified their morphology and size. Furthermore, the existing oxygen precipitates in the GCZ silicon were readily dissolved, because the Ge-doping facilitated the formation of smaller oxygen precipitates. Based on the facts, the mechanism for the enhancement effect of Ge-doping on oxygen precipitation has been preliminarily discussed.