Carbon ratio effect on the electrical and morphological properties of Silicon Carbide thin films

Abstract

An experimental method for preparing a homogenous mixture of Silicon Carbide by a small quantity of concentrated sulfuric acid at room temperature was introduced. SiC film exhibits an amorphous state due to acidic treatment that etches the crystalline surface of the film. SiC films were characterized using FTIR, SEM and optical images. SiC films porosity has been observed by SEM images show the morphology of the final composite. Electrical conductivity of thin films have been evaluated by four point probe Hall measurements. The best ratio of 6Si:4C demonstrated the highest conductivity 0.55 μS.cm.