Abstract
The carbon additions in the pressureless sintering of SiC are commonly used for the removal of SiO2 layers on the starting powders. In practice, it is common to add more C than is necessary for stoichiometric removal to ensure a complete deoxidation. As a result, inclusions of excess free C are a general feature of the microstructure of sintered SiC. This phenomenon was studied by high‐resolution Auger electron spectroscopy on ultra‐high‐vacuum‐exposed fracture surfaces as well as by high‐resolution transmission electron microscopy of B‐ and C‐doped materials.
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Schedule a callMore From: Journal of the American Ceramic Society. American Ceramic Society
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