Capacitance–Voltage Technique Based on Time Varying Magnetic Field for VDMOSFET—Part II: Measurements and Parameter Extractions

Abstract

In part I, we have proposed a new capacitance–voltage technique ${C}$ ( ${V}$ ), which is simultaneously based on external ac magnetic field for surface potential modulation and on dc voltage to sweep the gate voltage. In part II, we describe the parameter extractions of vertical double diffusion metal–oxide–semiconductor field effect transistor (VDMOSFET) devices, combining the capacitance characteristics of gate–source, ${C}_{\text {GS}}$ ( ${V}_{G}$ ) and gate–drain ${C}_{\text {GD}}$ ( ${V}_{G}$ ), measured using the above cited technique, with those measured conventionally. In doing so, we have been able to extract semiconductor capacitance ( ${C}_{\text {SC}}$ ), interface trap capacitance ( ${C}_{\text {it}}$ ), doping profile concentration ${N}$ ( ${x}$ ), and interface trap density ${D}_{\text {it}}$ ( ${E}$ ) of different regions of VDMOSFET.