Abstract
In this paper, we describe the structures of several new acid amplifiers and of extreme ultraviolet (EUV) resist formulations prepared from them. We have synthesized and lithographically evaluated eleven new compounds specifically designed for use as acid amplifiers in EUV resists. We make direct comparisions between resolution, line-edge roughness (LER) and sensitivity using the common resolution, line-edge roughness, and sensitivity (RLS) analysis technique of Z-parameter. We show that acid amplifiers are capable of simultaneously improving resolution, LER, and sensitivity.
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