Abstract
ABSTRACTThe offset between Si temperature and indicated TC temperature when a thermocouple instrumented wafer is placed in a double side heated RTP system was measured by means of an isothermal cavity, formed by 2 parallel Si wafers mounted in the system. The lamp powers were controlled to get an equal wafer temperature, making the cavity isothermal. Inside the cavity, an R-type TC with a NIST traceable calibration was mounted. Outside the cavity, a standard type K 1530 SensArray thermocouple [1] was exposed to the typical conditions in an RTP system. The offset was measured as the difference between the indicated temperature of the standard 1530 TC and the temperature of the NIST traceable type R TC. The 3 sources of the offset are discussed and a typical correction factor is proposed.
Published Version
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